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2023-0127-01
Nanotechnology / Materials
posted:2023/01/27
海水のイオン導電性を利用した海中無線通信 ~海水管,漁業用いけす内のワイヤレスリアルタイムモニタリングが可能に~
KAWARADA, Hiroshi Professor (Faculty of Science and Engineering School of Fundamental Science and Engineering)
collaborative researchers: 佐藤 弘隆 , 正留 康太 , 野本 玲於奈
2316
Nanotechnology / Materials
posted:2020/11/12
特許第7491547号
ダイヤモンド電界効果トランジスタ及びその製造方法
KAWARADA, Hiroshi Professor (Faculty of Science and Engineering School of Fundamental Science and Engineering)
2020-0131-03
Nanotechnology / Materials
posted:2020/02/06
Development of new electric wireless seawater communication
KAWARADA, Hiroshi Professor (Faculty of Science and Engineering School of Fundamental Science and Engineering)
● Electric communication utilizing conductivity of seawater● Transmitter : metal electrode ⇔ Receiver : transistor shape sensor operating in solutions● Apply square wave voltage to metal electrode &nb...
ノーマリオフ動作ダイヤモンド電力素子及びこれを用いたインバータ
KAWARADA, Hiroshi Professor (Faculty of Science and Engineering School of Fundamental Science and Engineering)
トランジスタの製造方法及びセンサ素子
KAWARADA, Hiroshi Professor (Faculty of Science and Engineering School of Fundamental Science and Engineering)
2016-0203-08
Nanotechnology / Materials
posted:2016/02/03
Boron-doped nanocrystalline diamond as a p-type transparent electrode
KAWARADA, Hiroshi Professor (Faculty of Science and Engineering School of Fundamental Science and Engineering)
collaborative researchers:古閑 三靖
● Production method of the p-type conduction of high Boron-doped NCD with high transmittance and excellent electrical characteristic● Achieving two layers which High Boron-doped NCD was grown on top of undoped transparent NCD with quartz substrate
2016-0203-07
Nanotechnology / Materials
posted:2016/02/03
Vertically oriented graphite layers on diamond substrate
KAWARADA, Hiroshi Professor (Faculty of Science and Engineering School of Fundamental Science and Engineering)
collaborative researchers:INABA, Masafumi Part-time Lecturer
● Implant ions to diamond (100) surface at high temperature ● Interstitial carbon atoms defuse to the diamond surface during the thermal treatment (1700oC, 2h) after implantation● High density vertically oriented graphite layer was formed on diamond surface
2016-0203-06
Nanotechnology / Materials
posted:2016/02/03
MOSFET on polycrystalline diamond
KAWARADA, Hiroshi Professor (Faculty of Science and Engineering School of Fundamental Science and Engineering)
collaborative researchers:モフド シャムスル ナシリク ビン サムソル バハリン , INABA, Masafumi Part-time Lecturer , 北林 祐哉 , 柴田 将暢
● We developed high breakdown voltage MOSFET with polycrystalline black diamond ● The device exhibits perfect modulation and good device characteristic pinch off and saturation region● High voltage breakdown of 1824 V by black polycrystalline diamond
2014-0122-05
Nanotechnology / Materials
posted:2014/01/23
ダイヤモンド半導体を用いた高信頼性電力素子
KAWARADA, Hiroshi Professor (Faculty of Science and Engineering School of Fundamental Science and Engineering)
・550℃の大気中でも導電性が確保され、絶縁性が向上した保護膜の製造方法・表面を水素化したダイヤモンド基板上に2層の保護膜を形成することで実現