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2015-0303-03
Nanotechnology / Materials
posted:2015/03/03
New Wide Bandgap Semiconductor --- β-Ga2O3 Single Crystal
ICHINOSE, Noboru Advisor to the Dean of Academic Affairs (retired)
collaborative researchers:SHIMAMURA, Kiyoshi Guest Professor (retired), ガルシア ビジョラ (retired)
・The proposal and actual proof of β-Ga2O3 single crystal as a new wide bandgap semiconductor ・Advantageous growth nature of β-Ga2O3 single crystals from melt under atmospheric pressure.・Wide controllability of conductivity (Large band gap energy (4.8~4.9V)