New Wide Bandgap Semiconductor --- β-Ga2O3 Single Crystal

2015-0303-03

researcher's name: about researcher ICHINOSE, Noboru Advisor to the Dean of Academic Affairs (retired)
affiliation
keyword

・The proposal and actual proof of β-Ga2O3 single crystal as a new wide bandgap semiconductor

・Advantageous growth nature of β-Ga2O3 single crystals from melt under atmospheric pressure.

・Wide controllability of conductivity (Large band gap energy (4.8～4.9V)

・Expectation for the new material beyond GaN, SiC semiconductors

・Realization of the large-sized single crystal from melt by EFG method

・Conductivity control -Development of the n-type, insulating and p-type dopants

・Development of ohmic and schottky electrodes

・The proposal and actual proof as substrates for LED

・Available now by Tamura Corporation

・Substrates for power devices and Visible/UV LEDs

・Diverse applications, such as high brightness LEDs, UV sensors, and etc

2inch β-Ga2O3 single crystal substrates by FEG method Source of photo: Tamura Corp. , Koha Co., Ltd.
Characteristics of LED on β-Ga2O3 substrate Source : Tamura Corp. , Koha Co., Ltd.
Firstly demonstrated Schottky barrier diodes using β-Ga2O3

SHIMAMURA, Kiyoshi Guest Professor , ガルシアビジョラ (独立行政法人　物質・材料研究機構)

posted: 2015/03/03