表題番号:2019Q-046 日付:2020/04/15
研究課題ダイヤモンド高密度ナノドーピングによるスピン制御と超伝導(非採択となった2019年度科研費基盤Sと同一タイトル)
研究者所属(当時) 資格 氏名
(代表者) 理工学術院 基幹理工学部 教授 川原田 洋
研究成果概要

Nitrogen vacancy (NV) center in diamond is expected as a magnetic sensor with high sensitivity at room temperature and single NV center succeeded in detecting 1H spins out of the substrate. For improvement magnetic sensitivity, both shallow and aligned NV ensemble is required since the magnetic sensitivity is inversely proportional to the root of number of NV centers. N-terminated (111) surface was fabricated and thin layer (10 nm) of high purity (111) diamond film was epitaxially grown on the surface. We confirmed that N density in the high purity diamond film and the formation of NV ensemble with 2D concentration of about 1 x 1011 cm-2 using the confocal PL-intensity mapping.

Superconducting quantum interference devices (SQUIDs) are widely used as high-sensitive magnetometers in several fields. However, there is still a problem with material instability in scanning SQUID microscope or quantum bit in quantum computing application. Superconducting boron-doped diamond shows excellent robustness in SQUID characteristics. We have demonstrated a first single crystalline diamond SQUID, whose Josephson junctions (JJs) were formed by step-edge structure. However, it was operated at 2.6 K. In this work, we have demonstrated diamond SQUIDs operating at 8.0 K well above liquid helium temperature 4.2 K using only (111) growth layer with Tc=10 K by using trench JJs.