MOSFET on polycrystalline diamond

2016-0203-06
researcher's name
about researcher KAWARADA, Hiroshi Professor
affiliation
Faculty of Science and Engineering School of Fundamental Science and Engineering
research field
Electronic materials/Electric materials
keyword

background

● Large wafers are necessary for power device materials
● Diamond is one of the promising power semiconductor material
● Polycrystalline diamond is suitable to enlarge wafer

summary

● We developed high breakdown voltage MOSFET with polycrystalline black diamond
● The device exhibits perfect modulation and good device characteristic pinch off and saturation region
● High voltage breakdown of 1824 V by black polycrystalline diamond

predominance

● High powered
● Low cost
● Manufacturing possibility

application/development

● High-voltage, direct current (HVDC)
● Electric vehicles
● Automaton
● Etc.

material

  • Fig. 1. Diagram of black polycrystalline diamond field effect transistor
  • Fig. 2. FESEM images revealing the polycrystalline nature of the black polycrystalline diamond
  • Fig.3. - Fig. 5

collaborative researchers

モフド シャムスル ナシリク ビン サムソル バハリン 　 (理工学術院　電子物理システム学科) , INABA, Masafumi Part-time Lecturer (retired) , 北林 祐哉 (理工学術院　電子物理システム学科) , 柴田 将暢 (理工学術院　電子物理システム学科)

same researcher's seeds

  • Vertically oriented graphite layers on diamond substrate
  • Boron-doped nanocrystalline diamond as a p-type transparent electrode
  • Development of new electric wireless seawater communication
posted: 2016/02/03