Boron-doped nanocrystalline diamond as a p-type transparent electrode

researcher's name
about researcher KAWARADA, Hiroshi Professor
Faculty of Science and Engineering School of Fundamental Science and Engineering
research field
Electronic materials/Electric materials


● For the high efficiency of the device, the p-type transparent electrode is necessary, but difficult to product stably
● ITO as the transparent electrode is the n-type semiconductor
● Indium(In) of ITO has the problem-the issue of resources, a price remarkable rise and the steady supply


● Production method of the p-type conduction of high Boron-doped NCD with high transmittance and excellent electrical characteristic
● Achieving two layers which High Boron-doped NCD was grown on top of undoped transparent NCD with quartz substrate


● Achieved more than 90% of transmittance, and less than seat resistance 300Ω/sq by the p-type conduction of high Boron-doped nanocrystalline diamonds(NCD) simultaneously
● High hole mobility values 2 to 4 cm2V-1s-1
● ITO alternatives for transparent conductors


● Flat panel display such as liquid crystal panel, plasma display panel, organic electroluminescence display
● Solar cell’s devices including for the usage in harsh conditions


  • Process of Boron-doped nanodiamond
  • Advantage of diamond Electrode
  • Desire for P-type transparent electrode

collaborative researchers

古閑 三靖 (理工学術院 先進理工学研究科)

same researcher's seeds

  • MOSFET on polycrystalline diamond
  • Vertically oriented graphite layers on diamond substrate
  • Development of new electric wireless seawater communication
posted: 2016/02/03